Continuum modeling of radio-frequency glow discharges. I: Theory and results for electropositive and electronegative gasesGOGOLIDES, E; SAWIN, H. H.Journal of applied physics. 1992, Vol 72, Num 9, pp 3971-3987, issn 0021-8979Article

n⁺-Polysilicon etching in CCl₄/He discharges: characterization and modelingGOGOLIDES, E; SAWIN, H. H.Journal of the Electrochemical Society. 1989, Vol 136, Num 4, pp 1147-1154, issn 0013-4651, 8 p.Article

Micro- and Nano-Engineering MNE 97 International Conference on Micro- and NanofabricationHATZAKIS, M; GOGOLIDES, E.Microelectronic engineering. 1998, Vol 41-42, issn 0167-9317, 663 p.Conference Proceedings

Continuum modeling of radio-frequency glow discharges. II: Paramagnetic studies and sensitivity analysisGOGOLIDES, E; SAWIN, H. H.Journal of applied physics. 1992, Vol 72, Num 9, pp 3988-4002, issn 0021-8979Article

Highly anisotropic silicon and Polysilicon room-temperature etching using fluorine-based high density plasmasTSEREPI, A; GOGOLIDES, E; CARDINAUD, C et al.Microelectronic engineering. 1998, Vol 41-42, pp 411-414, issn 0167-9317Conference Paper

Silylation of epoxy functionalised photoresists for optical, E - beam lithography and micromachining applicationsTEGOU, E; GOGOLIDES, E; ARGITIS, P et al.Microelectronic engineering. 1998, Vol 41-42, pp 335-338, issn 0167-9317Conference Paper

Complete plasma physics, plasma chemistry, and surface chemistry simulation of SiO₂ and Si etching in CF₄ plasmasGOGOLIDES, E; VAUVERT, P; RHALLABI, A et al.Microelectronic engineering. 1998, Vol 41-42, pp 391-394, issn 0167-9317Conference Paper

Modelling of plasma surface interactionsRHALLABI, A; GOGOLIDES, E; TURBAN, G et al.Le Vide (1995). 1996, Vol 52, Num 280, issn 1266-0167, 179, 185-203 [20 p.]Article

Radio-frequency glow discharges in methane gas : modelling of the gas-phase physics and chemistryGOGOLIDES, E; BUTEAU, C; AHMED RHALLABI et al.Journal of physics. D, Applied physics (Print). 1994, Vol 27, Num 4, pp 818-825, issn 0022-3727Article

Modelling of radio frequency plasmas in tetrafluoromethane (CF₄) : the gas phase physics and the role of negative ion detachmentGOGOLIDES, E; STATHAKOPOULOS, M; BOUDOUVIS, A et al.Journal of physics. D, Applied physics (Print). 1994, Vol 27, Num 9, pp 1878-1886, issn 0022-3727Article

Direct calculation of time-periodic states of continuum models of radio-frequency plasmasGOGOLIDES, E; SAWIN, H. H; BROWN, R. A et al.Chemical engineering science. 1992, Vol 47, Num 15-16, pp 3839-3855, issn 0009-2509Article

Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulationsPATSIS, G. P; CONSTANTOUDIS, V; GOGOLIDES, E et al.Microelectronic engineering. 2004, Vol 75, Num 3, pp 297-308, issn 0167-9317, 12 p.Article

Measurement capabilities of optical 3D-sensors for MST applicationsBRAND, U; FLÜGGE, J.Microelectronic engineering. 1998, Vol 41-42, pp 623-626, issn 0167-9317Conference Paper

Mask patterning challenges for device fabrication below 100 nmGESLEY, M.Microelectronic engineering. 1998, Vol 41-42, pp 7-14, issn 0167-9317Conference Paper

Microlithography in midlife crisisAUSSCHNITT, C. P.Microelectronic engineering. 1998, Vol 41-42, pp 41-46, issn 0167-9317Conference Paper

Monte Carlo simulation of electron beam lithography on topographical substratesZHENG CUI.Microelectronic engineering. 1998, Vol 41-42, pp 175-178, issn 0167-9317Conference Paper

New trends in plasma etching for Ultra Large Scale Integration TechnologyJOUBERT, O.Microelectronic engineering. 1998, Vol 41-42, pp 17-24, issn 0167-9317Conference Paper

Polysilicon air-bridge thermal sensor coupled to log-periodic antenna for infrared detectionCHONG, N; AHMED, H.Microelectronic engineering. 1998, Vol 41-42, pp 473-475, issn 0167-9317Conference Paper

Scanning electron microscope matching and calibration for dimensional metrologyMARCHMAN, H.Microelectronic engineering. 1998, Vol 41-42, pp 597-602, issn 0167-9317Conference Paper

The future of Lithography after 193 nm opticsMACKAY, R. S.Microelectronic engineering. 1998, Vol 41-42, pp 71-74, issn 0167-9317Conference Paper

The impact of aberration averaging during step-and-scan on the photolithographic processERDMANN, A; ARNZ, M.Microelectronic engineering. 1998, Vol 41-42, pp 117-120, issn 0167-9317Conference Paper

A complete plasma physics, plasma chemistry, and surface chemistry simulator used for deposition and etching of thin filmsGOGOLIDES, E; VAUVERT, P; TURBAN, G et al.Le Vide (1995). 1997, Vol 53, Num 284, pp 166-171, issn 1266-0167, SUPConference Paper

RF plasmas in methane : prediction of plasma properties and neutral radical densities with combined gas-phase physics and chemistry modelGOGOLIDES, E; MARY, D; AHMED RHALLABI et al.Japanese journal of applied physics. 1995, Vol 34, Num 1, pp 261-270, issn 0021-4922, 1Article

A new technique for multiple overlay checkAUZINO, L; CANGIANO, A.Microelectronic engineering. 1998, Vol 41-42, pp 607-610, issn 0167-9317Conference Paper

High energy implantation by ion projectionMEIJER, J; STEPHAN, A.Microelectronic engineering. 1998, Vol 41-42, pp 257-260, issn 0167-9317Conference Paper